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SiHFR110 - Power MOSFET

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • Surface-mount (IRFR110, SiHFR110).
  • Available in tape and reel.
  • Fast switching.
  • Ease of paralleling Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com IRFR110, SiHFR110 Vishay Siliconix Power MOSFET DPAK (TO-252) D D G S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.3 0.54 2.3 3.8 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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