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SiHFI9Z34G - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the desig

Key Features

  • Isolated package.
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available.
  • Sink to lead creepage distance = 4.8 mm.
  • P-channel Available.
  • 175 °C operating temperature.
  • Dynamic dV/dt rating.
  • Low thermal resistance.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts t.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 34 9.9 16 Single 0.14 TO-220 FULLPAK S G GDS D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available • Sink to lead creepage distance = 4.8 mm • P-channel Available • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant.