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SiHFI9530G - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • P-Channel.
  • 175 °C Operating Temperature.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available 0.30 RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com - 100 VGS = - 10 V 38 6.8 21 Single S FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available 0.30 RoHS* COMPLIANT TO-220 FULLPAK DESCRIPTION G G D S D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.