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SiHFD224 - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • 250 1.1 www. DataSheet4U. com.
  • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free RoHS.

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Full PDF Text Transcription

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IRFD224, SiHFD224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.7 7.8 Single D FEATURES 250 1.1 www.DataSheet4U.com • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free RoHS COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers.
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