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SIHFD020 - Power MOSFET

Description

The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.

Features

  • 50 0.10.
  • For Automatic Insertion.
  • Compact, End Stackable.
  • Fast Switching.
  • Ease of Paralleling.
  • Excellent Temperature Stability.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Full PDF Text Transcription

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www.DataSheet.co.kr IRFD020, SiHFD020 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 7.1 7.1 Single D FEATURES 50 0.10 • For Automatic Insertion • Compact, End Stackable • Fast Switching • Ease of Paralleling • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT HVMDIP DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.
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