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SiHFD123 - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • 100 0.27.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription

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IRFD123, SiHFD123 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 16 4.4 7.7 Single D FEATURES 100 0.27 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.
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