SiHFBE20 - Power MOSFET

Vishay

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

800 6.5.
Dynamic dV/dt Rating.
Repetitive Avalanche Rated.
Fast Switching.
Ease of Paralleling.
Simple Drive Requirements.
Lead (Pb)-free Available Available RoHS.

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SiHFBE20 power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiHFBE20
Manufacturer	Vishay
File Size	750.31 KB
Description	Power MOSFET
Datasheet	SiHFBE20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 38 5.0 21 Single D FEATURES 800 6.5 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.