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SiHFBC40LC - Power MOSFET

Description

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs.

Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.

Features

  • 600 V 1.2.
  • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription

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IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 39 10 19 Single D FEATURES 600 V 1.2 • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V, VGS Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.com TO-220 DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.
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