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SS8PH9 - (SS8PH9 / SS8PH10) High Current Density Surface Mount High Voltage Schottky Rectifier

Download the SS8PH9 datasheet PDF. This datasheet also covers the SS8PH10 variant, as both devices belong to the same (ss8ph9 / ss8ph10) high current density surface mount high voltage schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • eSMP ® Series K.
  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Guardring for overvoltage protection.
  • High barrier technology, TJ = 175 °C maximum 1 2.
  • Low leakage current.
  • Meets MSL level 1, per LF maximum peak of 260 °C.
  • AEC-Q101 qualified J-STD-020, TO-277A (SMPC) K Cathode Anode 1 Anode 2.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free a.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SS8PH10_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SS8PH9
Manufacturer Vishay
File Size 156.42 KB
Description (SS8PH9 / SS8PH10) High Current Density Surface Mount High Voltage Schottky Rectifier
Datasheet download datasheet SS8PH9 Datasheet

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Other Datasheets by Vishay

Part Number Description
SS8PH10 (SS8PH9 / SS8PH10) High Current Density Surface Mount High Voltage Schottky Rectifier
SS8P2CL High Current Density Surface Mount Schottky Barrier Rectifier
SS8P2L Schottky Barrier Rectifiers
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SS8P3CL High Current Density Surface Mount Schottky Barrier Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr New Product SS8PH9, SS8PH10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount High Voltage Schottky Rectifier FEATURES eSMP ® Series K • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 2 • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified J-STD-020, TO-277A (SMPC) K Cathode Anode 1 Anode 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 8.0 A IR TJ max. 8.0 A 90 V, 100 V 150 A 20 mJ 0.720 V 0.
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