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SS8PH10 - (SS8PH9 / SS8PH10) High Current Density Surface Mount High Voltage Schottky Rectifier

Features

  • eSMP ® Series K.
  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Guardring for overvoltage protection.
  • High barrier technology, TJ = 175 °C maximum 1 2.
  • Low leakage current.
  • Meets MSL level 1, per LF maximum peak of 260 °C.
  • AEC-Q101 qualified J-STD-020, TO-277A (SMPC) K Cathode Anode 1 Anode 2.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free a.

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Datasheet Details

Part number SS8PH10
Manufacturer Vishay
File Size 156.42 KB
Description (SS8PH9 / SS8PH10) High Current Density Surface Mount High Voltage Schottky Rectifier
Datasheet download datasheet SS8PH10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr New Product SS8PH9, SS8PH10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount High Voltage Schottky Rectifier FEATURES eSMP ® Series K • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 2 • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified J-STD-020, TO-277A (SMPC) K Cathode Anode 1 Anode 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 8.0 A IR TJ max. 8.0 A 90 V, 100 V 150 A 20 mJ 0.720 V 0.
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