Datasheet4U Logo Datasheet4U.com

SIR468DP - N-Channel MOSFET

Features

  • Halogen-free.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested RoHS.

📥 Download Datasheet

Datasheet preview – SIR468DP

Datasheet Details

Part number SIR468DP
Manufacturer Vishay Siliconix
File Size 122.23 KB
Description N-Channel MOSFET
Datasheet download datasheet SIR468DP Datasheet
Additional preview pages of the SIR468DP datasheet.

📁 Similar Datasheet

  • SiR4606DP - N-Channel 60V MOSFET (Vishay)
  • SiR404DP - N-Channel MOSFET (Vishay)
  • SIR406DP - N-Channel MOSFET (Vishay)
  • SiR4156LDP - N-Channel MOSFET (Vishay)
  • SIR416DP - N-Channel 40-V (D-S) MOSFET (Vishay)
  • SIR418DP - N-Channel 40-V (D-S) MOSFET (Vishay)
  • SIR422DP - N-Channel 40-V (D-S) MOSFET (Vishay)
  • SiR424DP - N-Channel MOSFET (Vishay)
  • SiR426DP - N-Channel MOSFET (Vishay)
  • SiR432DP - N-Channel 100-V (D-S) MOSFET (Vishay)
Other Datasheets by Vishay Siliconix

Full PDF Text Transcription

Click to expand full text
SiR468DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0057 at VGS = 10 V 0.0076 at VGS = 4.5 V ID (A)a 40 13.8 nC 40 Qg (Typ.) FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS • Low-Side Switch • Notebook DC/DC 6.15 mm S 1 2 3 S S 5.15 mm D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR468DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.
Published: |