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SiR4156LDP - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS x Qg figure-of-merit (FOM).
  • Tuned for the lowest RDS x Qoss FOM.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiR4156LDP
Manufacturer Vishay
File Size 200.90 KB
Description N-Channel MOSFET
Datasheet download datasheet SiR4156LDP Datasheet
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Full PDF Text Transcription

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www.vishay.com SiR4156LDP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 100 0.0295 0.033 8.8 25.7 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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