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SI7792DP - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • SkyFET™ Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode.
  • 100 % Rg Tested.
  • 100 % Avalanche Tested.
  • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 6.15 mm S 1 2 3 S S 5.15 mm.

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Datasheet Details

Part number SI7792DP
Manufacturer Vishay
File Size 578.39 KB
Description N-Channel MOSFET
Datasheet download datasheet SI7792DP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr New Product Si7792DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0021 at VGS = 10 V 0.0026 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 41 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET™ Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 6.15 mm S 1 2 3 S S 5.