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SI7705DN - Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

Key Features

  • ID (A) - 6.3 - 5.3 - 4.6 rDS(on) (W) 0.048 @ VGS = -4.5 V 0.068 @ VGS = -2.5 V 0.090 @ VGS = -1.8 V D TrenchFETr Power.

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Datasheet Details

Part number SI7705DN
Manufacturer Vishay
File Size 55.95 KB
Description Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
Datasheet download datasheet SI7705DN Datasheet

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Full PDF Text Transcription (Reference)

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Si7705DN New Product Vishay Siliconix Single P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) -20 FEATURES ID (A) - 6.3 - 5.3 - 4.6 rDS(on) (W) 0.048 @ VGS = -4.5 V 0.068 @ VGS = -2.5 V 0.090 @ VGS = -1.8 V D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Charger Switching SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 1.0 PowerPAKt 1212-8 S K 3.30 mm A 1 2 3.