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SI6866BDQ - Dual N-Channel MOSFET

General Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.

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Datasheet Details

Part number SI6866BDQ
Manufacturer Vishay
File Size 263.75 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SI6866BDQ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.