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Si6862DQ
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET with Current Sense
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.026 @ VGS = 4.5 V 0.036 @ VGS = 2.5 V
ID (A)
6.6 5.6
D
KELVIN
TSSOP-8
D S1 SENSE1 G 1 2 3 4 Top View G D 8 D S2 SENSE2 KELVIN 7 6 5 S1 SENSE1 S2 SENSE2
Si6862DQ
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
20 "12 6.6 5.2 30 1.5 1.8 1.1
Steady State
Unit
V
5.2 4.2 A
0.9 1.1 0.