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Si6467BDQ
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0125 @ VGS = -4.5 V -12 0.0155 @ VGS = -2.5 V 0.020 @ VGS = -1.8 V
ID (A)
-8.0 - 7.0 - 6.0
S*
TSSOP-8
D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common.
Si6467BDQ
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
-12 "8 - 8.0
Steady State
Unit
V
-6.8 -5.4 -30 A -0.95 1.
SI6467BDQ Datasheet
