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Si6433DQ - 20V P-Channel PowerTrench MOSFET

Description

This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Power management L

Features

  • 4.5 A,.
  • 20 V. RDS(ON) = 47 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 65 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 100 mΩ @ VGS =.
  • 1.8 V.
  • RDS(ON) rated for use with 1.8 V logic.
  • Low gate charge (13nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • Low profile TSSOP-8 package D S S D TSSOP-8 G S S D Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS Drain.
  • Source Voltag.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
Si6953DQ Dual 20V P-Channel PowerTrench MOSFET

Full PDF Text Transcription

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Si6433DQ July 2001 Si6433DQ 20V P-Channel PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Power management • Load switch Features • –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V • RDS(ON) rated for use with 1.
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