SI5435BDC - P-Channel MOSFET

Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive.

Vishay Siliconix

📥 Download Datasheet

Datasheet Details

Part number	SI5435BDC
Manufacturer	Vishay Siliconix
File Size	256.63 KB
Description	P-Channel MOSFET
Datasheet	SI5435BDC Datasheet
Additional preview pages of the SI5435BDC datasheet.

📁 Similar Datasheet

Si5432DC - N-Channel MOSFET (Vishay)
Si540 - Crystal Oscillator (Silicon Labs)
Si540 - Crystal Oscillator (Skyworks)
Si5403DC - P-Channel 30-V (D-S) MOSFET (Vishay)
Si5406CDC - N-Channel MOSFET (Vishay)
Si541 - Crystal Oscillator (Skyworks)
Si5410DU - N-Channel MOSFET (Vishay)
SI5411-H - IRED (AUK)
SI5411-HB - IRED (AUK)
Si5411EDU - P-Channel MOSFET (Vishay)

Other Datasheets by Vishay Siliconix

SI5435DC - P-Channel MOSFET
SI5433DC - P-Channel MOSFET
SI5401DC - P-Channel 20-V (D-S) MOSFET
SI5402BDC - N-Channel 30-V (D-S) MOSFET
SI5402DC - N-Channel 30-V (D-S) MOSFET
SI5404BDC - N-Channel 2.5-V (G-S) MOSFET
SI5404DC - N-Channel MOSFET
SI5406DC - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

www.DataSheet.co.kr SPICE Device Model Si5435BDC Vishay Siliconix P-Channel 30-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Published: Jan 20, 2012 |