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Si5402DC
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (Ω)
0.035 @ VGS = 10 V 0.055 @ VGS = 4.5 V
ID (A)
6.7 5.3
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1206-8 ChipFETt
1
D D D D S D D G
D
G Marking Code AA XX Lot Traceability and Date Code
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Part # Code
S N-Channel MOSFET
Ordering Information: Si5402DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
30 20 6.7 4.8 20 2.
SI5402DC Datasheet
