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SI1958DH - Dual N-Channel MOSFET

Key Features

  • Qg (Typ. ) 1.2 nC 1.3a.
  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SI1958DH
Manufacturer Vishay
File Size 181.64 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SI1958DH Datasheet

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www.DataSheet.co.kr Si1958DH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.205 at VGS = 4.5 V 0.340 at VGS = 2.5 V ID (A)a 1.3 a FEATURES Qg (Typ.) 1.2 nC 1.