Click to expand full text
Si1903DL
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.995 @ VGS = -4.5 V -20 1.190 @ VGS = -3.6 V 1.80 @ VGS = -2.5 V
ID (A)
"0.44 "0.40 "0.32
www.DataSheet4U.com
SOT-363 SC-70 (6-LEADS)
S1 1 6 D1 Marking Code QA G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code
D2
3
4
S2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS -0.25 0.30 0.16 -55 to 150
Symbol
VDS VGS
5 secs
Steady State
-20 "12
Unit
V
"0.44 "0.31 "1.