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Si1501DL
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
Channel
N-Channel
VDS (V)
20
rDS(on) (W)
2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V 3.8 @ VGS = −4.5 V 5.0 @ VGS = −2.5 V
ID (mA)
250 150 −180 −100
P Channel P-Channel
−20
SC-70 (6-Leads) S1 G1 D2 1 2 3 Top View 6 5 4 Marking Code YY Lot Traceability and Date Code Part # Code D1 G2 S2 RE XX
SOT-363
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM PD TJ, Tstg
N-Channel
20 "8 250 200 500 0.20 0.