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N-Channel 20 V (D-S) MOSFET
Si1058X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) () 0.091 at VGS = 4.5 V 0.124 at VGS = 2.5 V
ID (A) 1.3a 1.1
Qg (Typ.) 3.5
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Load Switch for Portable Devices
SC-89 (6-LEADS)
D1
6D
D2
5D
G3
4S
Marking Code
T WL
Lot Traceability and Date Code
Part Number Code
Top View Ordering Information: Si1058X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
1.3b, c 1.
SI1058X Datasheet
