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Si8461DB
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -20
RDS(on) (Ω) 0.100 at VGS = -4.5 V 0.118 at VGS = -2.5 V 0.140 at VGS = -1.8 V 0.205 at VGS = -1.5 V
ID (A) a, e -3.7 -3.4 -3.1 -2
Qg (TYP.) 9.5 nC
MICRO FOOT® 1 x 1
S
S2
xxxxxxx
3 1
1
1 mm
4G D
1 mm
Backside View
Bump Side View
Marking Code: xxxx = 8461
xxx = Date / lot traceability code
Ordering Information: Si8461DB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® power MOSFET
• Ultra small 1 mm x 1 mm maximum outline
• Ultra-thin 0.548 mm maximum height
• Material categorization: for definitions of compliance please see www.vishay.