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Si8461DB - P-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® power MOSFET.
  • Ultra small 1 mm x 1 mm maximum outline.
  • Ultra-thin 0.548 mm maximum height.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number Si8461DB
Manufacturer Vishay Intertechnology
File Size 153.04 KB
Description P-Channel MOSFET
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www.vishay.com Si8461DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) 0.100 at VGS = -4.5 V 0.118 at VGS = -2.5 V 0.140 at VGS = -1.8 V 0.205 at VGS = -1.5 V ID (A) a, e -3.7 -3.4 -3.1 -2 Qg (TYP.) 9.5 nC MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D 1 mm Backside View Bump Side View Marking Code: xxxx = 8461 xxx = Date / lot traceability code Ordering Information: Si8461DB-T2-E1 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Ultra small 1 mm x 1 mm maximum outline • Ultra-thin 0.548 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.
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