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Si8466EDB - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® power MOSFET.
  • Typical ESD protection 3000 V HBM.
  • Ultra small 1 mm x 1 mm maximum outline.
  • Ultra thin 0.548 mm maximum height.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number Si8466EDB
Manufacturer Vishay
File Size 153.43 KB
Description N-Channel MOSFET
Datasheet download datasheet Si8466EDB Datasheet
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Full PDF Text Transcription

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www.vishay.com Si8466EDB Vishay Siliconix N-Channel 8 V (D-S) MOSFET MICRO FOOT® 1 x 1 S S2 xxxxxxx 3 1 1 1 mm 4G D 1 mm Backside View Bump Side View Marking code: xxxx = 8466 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.5 V RDS(on) max. () at VGS = 1.2 V Qg typ. (nC) ID (A) a, e Configuration 8 0.043 0.046 0.060 0.090 6.8 5.4 Single FEATURES • TrenchFET® power MOSFET • Typical ESD protection 3000 V HBM • Ultra small 1 mm x 1 mm maximum outline • Ultra thin 0.548 mm maximum height • Material categorization: for definitions of compliance please see www.vishay.
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