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Features
Enhancement mode Low on-resistance RDS(on) @ VGS=10 V Super Junction Technology Ultra-fast and robust body diode 100% Avalanche test,100% Rg Tested
VSU040N65HS3
650V/80A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V I D(Silicon Limited)
650 V
32 mΩ
80
A
TO-247
Part ID VSU040N65HS3
Package Type TO-247
Marking 040N65H
Packing 30pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
Rating
V(BR)DSS Drain-Source breakdown voltage
650
VGS IS ID ID IDM
Gate-Source voltage
±30
Diode continuous forward current (Silicon limited)
TC = 25°C
80
Continuous drain current @VGS=10V (Silicon limited)
TC = 25°C
80
Continuous drain current @VGS=10V (Silicon limited)
TC = 100°C
51
Pulse drain current tested ①
TC = 25°
VSU040N65HS3 Datasheet
