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VSF270N80HS - 800V/11A N-Channel Advanced Power MOSFET

Features

  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=10 V V DS R @ DS(on),TYP VGS=10 V ID 800 V 240 mΩ 11 A.
  • Super Junction Technology.
  • 100% Avalanche test,100% Rg Tested TO-220F.
  • Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID VSF270N80HS Package Type TO-220F Marking 270N80H Packing 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating V(BR)DSS Drain-Source breakdown voltage 800 VGS IS ID I.

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Datasheet Details

Part number VSF270N80HS
Manufacturer Vergiga
File Size 1.00 MB
Description 800V/11A N-Channel Advanced Power MOSFET
Datasheet download datasheet VSF270N80HS Datasheet

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VSF270N80HS 800V/11A N-Channel Advanced Power MOSFET Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V V DS R @ DS(on),TYP VGS=10 V ID 800 V 240 mΩ 11 A  Super Junction Technology  100% Avalanche test,100% Rg Tested TO-220F  Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID VSF270N80HS Package Type TO-220F Marking 270N80H Packing 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating V(BR)DSS Drain-Source breakdown voltage 800 VGS IS ID ID IDM Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Continuous drain current @VGS=10V Pulse drain current tested ① ±30 TC = 25°C 11 TC = 25°C 11 TC = 100°C 7 TC = 25°C 40 IDSM Continuous drain current @VG
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