VSP002N06MS-G Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Ⅱ Technology - Fast Switching and High efficiency - Pb-free lead plating; Ro HS pliant 60V/200A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 1.9 mΩ 2.9 mΩ 200 A PDFN5x6 Part ID Package Type PDFN5x6 Marking 002N06MG Tape and reel information 3000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics...