VSP002N06HS-G Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=10 V - Vito MOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 60V/190A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 2.1 mΩ 190 A PDFN5060X Part ID VSP002N06HS-G Package Type PDFN5060X Marking 002N06HG Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS IS ID IDM IDSM EAS PD Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V Avalanche energy, single pulsed ② Maximum power dissipation PDSM Maximum power dissipation ③ TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C TC =25°C TC =100°C TA=25°C TA=70°C TSTG,TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter Typical RθJC Thermal Resistance, Junction-to-Case...