VS6606GE
Features
V DS R @ DS(on),TYP VGS=10V
65 V 5 mΩ
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- Vito MOS® Ⅱ Technology
- Fast Switching and High efficiency
R @ DS(on),TYP VGS=4.5V ID
8 mΩ 70 A
PDFN3333
- Pb-free lead plating; Ro HS pliant; Halogen free
Part ID VS6606GE
Package Type PDFN3333
Marking 6606GE
Tape and reel information
5000pcs/Reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
VGS IS ID IDM IDSM EAS PD
Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V
Pulse drain current tested ①
Continuous drain current @VGS=10V
Avalanche energy, single pulsed ②
Maximum power dissipation
PDSM
Maximum power dissipation ③
TSTG,TJ Storage and junction temperature range
Thermal Characteristics
Symbol
Parameter
TC =25°C TC =25°C TC =100°C TC =25°C
TA=25°C TA=70°C
TC =25°C TC =100°C
TA=25°C TA=70°C
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal...
