VS6602GP
Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- Vito MOS® Ⅱ Technology
- Fast Switching and High efficiency
- Pb-free lead plating; Ro HS pliant
60V/190A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID
2.4 mΩ
3.5 mΩ
190 A
PDFN5060X
Part ID VS6602GP
Package Type PDFN5060X
Marking 6602GP
Tape and reel information
3000pcs/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Gate-Source voltage
IS ID IDM
IDSM EAS
Diode continuous forward current Continuous drain current @VGS=10V
Pulse drain current tested ①
Continuous drain current @VGS=10V
Avalanche energy, single pulsed ②
TC =25°C TC =25°C TC =100°C TC =25°C
TA=25°C TA=70°C
Maximum power dissipation
PDSM
Maximum power dissipation ③
TSTG , TJ
Storage and Junction Temperature Range
Thermal Characteristics
TC =25°C TC...
