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VS4805DS - Dual P-Channel Advanced Power MOSFET

Description

VS4805DS designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Features

  • BVDSS (typ. )=-30V Ron(typ. )=18 mΩ @VGS=-10V Ron(typ. )=28 mΩ @VGS=-4.5V Low On-Resistance Fast Switching Lead-Free, Hg-Free,Rohs Compliant VS4805DS -30V/-8A Dual P-Channel Advanced Power MOSFET Pin.

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Datasheet Details

Part number VS4805DS
Manufacturer Vanguard Semiconductor
File Size 299.90 KB
Description Dual P-Channel Advanced Power MOSFET
Datasheet download datasheet VS4805DS Datasheet

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Full PDF Text Transcription

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Features BVDSS (typ.)=-30V Ron(typ.)=18 mΩ @VGS=-10V Ron(typ.)=28 mΩ @VGS=-4.5V Low On-Resistance Fast Switching Lead-Free, Hg-Free,Rohs Compliant VS4805DS -30V/-8A Dual P-Channel Advanced Power MOSFET Pin Description Description VS4805DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
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