VS4802GPMT
Features
- Enhancement mode
- Ultra low on-resistance
- Vito MOS® Ⅱ Technology
- Fast Switching and High efficiency
- 100% Avalanche Tested,100% Rg Tested
40V/200A N-Channel Advanced Power MOSFET
V DS
40 V
R @ DS(on),TYP VGS=10V
0.7 mΩ
R @ DS(on),TYP VGS=4.5V
1.1 mΩ
I D(Silicon Limited)
215 A
I D(Package Limited)
200 A
PDFN5x6
Part ID VS4802GPMT
Package Type PDFN5x6
Marking 4802GPM
Packing 3000pcs/Reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
Gate-Source voltage
Diode continuous forward current
TC = 25°C
Continuous drain current @VGS=10V (Silicon limited)
TC = 25°C
Continuous drain current @VGS=10V (Silicon limited)
TC = 100°C
Continuous drain current @VGS=10V (Wire bond limited) TC =...
