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VS3207AT - N-Channel Advanced Power MOSFET

General Description

VS3207AT designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

  • Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant.

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Datasheet Details

Part number VS3207AT
Manufacturer Vanguard Semiconductor
File Size 400.22 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3207AT Datasheet

Full PDF Text Transcription for VS3207AT (Reference)

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VS3207AT 80V/180A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free,...

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Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS3207AT designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

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