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VS3080AD - N-Channel Advanced Power MOSFET

General Description

VS3080AD designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

  • Low On-Resistance.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.

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Datasheet Details

Part number VS3080AD
Manufacturer Vanguard Semiconductor
File Size 254.97 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3080AD Datasheet

Full PDF Text Transcription for VS3080AD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VS3080AD. For precise diagrams, and layout, please refer to the original PDF.

VS3080AD 30V/90A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, ...

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valanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant Description VS3080AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

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