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VS2N60AZ - N-Channel Advanced Power MOSFET

Features

  • N-Channel，10V Logic Level Control.
  • Enhancement mode.
  • Fast Switching.
  • Pb-free lead plating; RoHS compliant VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 600 V 5 Ω 2 A SOT223 Part ID VS2N60AZ Package Type SOT223 Marking 2N60AZ Tape and reel information 2500PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forwa.

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Datasheet Details

Part number VS2N60AZ
Manufacturer Vanguard Semiconductor
File Size 1.09 MB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS2N60AZ Datasheet

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Full PDF Text Transcription

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant VS2N60AZ 600V/2A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 600 V 5 Ω 2 A SOT223 Part ID VS2N60AZ Package Type SOT223 Marking 2N60AZ Tape and reel information 2500PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation TSTG , TJ Storage and junction temperature range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =70°C TA =25°C TA =25°C TA =70°C RθJL R JA Thermal Resistance, Junction
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