VS2302AT
Features
- Ron(typ.)=30 mΩ @VGS=4.5V
- Low On-Resistance
- 150°C Operating Temperature
- Fast Switching
- Lead-Free, Ro HS pliant
20V/3.2A N-Channel Advanced Power MOSFET
Description
VS2302AT designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features bine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient...
