Description
The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank.
it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply.
Features
- Single 3.3V ( ± 0.3V ) power supply.
- High speed clock cycle time : 7/8ns.
- Fully synchronous with all signals referenced to a positive clock edge.
- Programmable CAS Iatency (2,3).
- Programmable burst length (1,2,4,8,& Full page).
- Programmable wrap sequence (Sequential/Interleave).
- Automatic precharge and controlled precharge.
- Auto refresh and self refresh modes.
- Quad Internal banks controlled by A12 & A13 (Bank select.