Datasheet4U Logo Datasheet4U.com

VG36643241BT-7 - CMOS Synchronous Dynamic RAM

Description

The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively.

Features

  • Single 3.3V ( ± 0.3V ) power supply.
  • High speed clock cycle time : 8/10 for LVTTL.
  • High speed clock cycle time : 8/10 for SSTL - 3.
  • Fully synchronous with all signals referenced to a positive clock edge.
  • Programmable CAS Iatency (2,3).
  • Programmable burst length (1,2,4,8,& Full page).
  • Programmable wrap sequence (Sequential/Interleave).
  • Automatic precharge and controlled precharge.
  • Auto refresh and self refresh modes.

📥 Download Datasheet

Datasheet Details

Part number VG36643241BT-7
Manufacturer Vanguard International Semiconductor
File Size 0.96 MB
Description CMOS Synchronous Dynamic RAM
Datasheet download datasheet VG36643241BT-7 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VIS Description Preliminary VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package. Features • Single 3.3V ( ± 0.
Published: |