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VG36641641DT - CMOS Synchronous Dynamic RAM

Description

4 (word x bit x bank), respectively.

Features

  • Single 3.3V ( ± 0.3V ) power supply.
  • High speed clock cycle time -6 : 166MHz, available only on 4MX16 option -7 : 143MHz, 133MHz -7L: 133MHz -8H: 100MHz.
  • Fully synchronous operation referenced to clock rising edge.
  • Possible to assert random column access in every cycle.
  • Quad internal banks controlled by A12 & A13 (Bank Select).
  • Byte control by LDQM and UDQM for VG36641641D.
  • Programmable Wrap sequen.

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Datasheet Details

Part number VG36641641DT
Manufacturer Vanguard International Semiconductor
File Size 1.00 MB
Description CMOS Synchronous Dynamic RAM
Datasheet download datasheet VG36641641DT Datasheet

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Full PDF Text Transcription (Reference)

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VIS Description 4 (word x bit x bank), respectively. VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII. Features • Single 3.3V ( ± 0.
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