Click to expand full text
VBMB2309
P-Channel 30 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) - 30
RDS(on) () 0.009 at VGS = - 10 V 0.013 at VGS = - 4.5 V
ID (A)a 65 55
FEATURES • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-220 FULLPAK
S G
GDS
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
Avalanche Current Repetitive Avalanche Energyb
L = 0.
VBMB2309 Datasheet
