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VBMB2611 - P-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC S G Top View D P-Channel MOSFET.

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Datasheet preview – VBMB2611

Datasheet Details

Part number VBMB2611
Manufacturer VBsemi
File Size 253.25 KB
Description P-Channel MOSFET
Datasheet download datasheet VBMB2611 Datasheet
Additional preview pages of the VBMB2611 datasheet.

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Full PDF Text Transcription

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VBMB2611 P-Channel 60V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.012 at VGS = - 10 V 0.015 at VGS = - 4.5 V ID (A) -60 -50 Qg (Typ.) 67 TO-220 FULLPAK FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC S G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Avalanche Current IAS Single Avalanche Energya L = 0.
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