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VBL1615 - N-Channel MOSFET

Datasheet Summary

Features

  • 175 °C Junction Temperature.
  • TrenchFET® Power MOSFET D D2PAK (TO-263) G D S G S N-Channel MOSFET www. VBsemi. com.

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Datasheet Details

Part number VBL1615
Manufacturer VBsemi
File Size 489.98 KB
Description N-Channel MOSFET
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VBL1615 N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 60 V 11 mΩ 12 mΩ 75 A Single FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET D D2PAK (TO-263) G D S G S N-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 75 50a Pulsed Drain Current IDM 200 A Continuous Source Current (Diode Conduction) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.
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