Datasheet4U Logo Datasheet4U.com

VBL1603 - N-Channel MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • Package with Low Thermal Resistance.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263) GD S D G S N-Channel MOSFET.

📥 Download Datasheet

Datasheet preview – VBL1603

Datasheet Details

Part number VBL1603
Manufacturer VBsemi
File Size 708.41 KB
Description N-Channel MOSFET
Datasheet download datasheet VBL1603 Datasheet
Additional preview pages of the VBL1603 datasheet.

📁 Similar Datasheet

  • VBLD861 - Ultra Low Phase Noise VCXO (Connor-Winfield)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
VBL1603 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration www.VBsemi.com N-Channel 60 V (D-S) MOSFET 60 0.0028 0.0120 210 Single FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263) GD S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
Published: |