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VBL1206N
N-Channel 200 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
200
0.050 at VGS = 10 V
0.060 at VGS = 6.5 V
TO-263
ID (A) 40 36
FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • PWM Optimized for Fast Switching • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Isolated DC/DC Converters
- Primary-Side Switch
D
GD S Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.
VBL1206N Datasheet
