Click to expand full text
VBL1204N
N-Channel 200-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
V(BR)DSS (V)
RDS(on) (Ω)
200
0.038 at VGS = 15 V
0.043 at VGS = 10 V
ID (A) 45 40
Qg (Typ.) 57
FEATURES • Trench Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested
APPLICATIONS • Power Supply • Lighting Systems
D2PAK (TO-263)
GD S
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energya
L = 0.
VBL1204N Datasheet
