Click to expand full text
VBI2102M
P-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 100
0.200 at VGS = - 10 V 0.230 at VGS = - 6 V
ID (A) - 3.0 - 2.4
Qg (Typ.) 13.2 nC
S
D
G
FEATURES • TrenchFET® Power MOSFET • 100% Rg and UIS Tested
APPLICATIONS • Active Clamp in Intermediate DC/
DC Power Supplies • H-Bridge High Side Switch for
Lighting Application
Available
GD S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
IS
L = 0.
VBI2102M Datasheet
