Click to expand full text
VBI1226
N-Channel 20-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.026 at VGS = 4.5 V 20
0.030 at VGS = 2.5 V
ID (A)a 6.8 6.8
Qg (Typ.) 10 nC
D
FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices
D
RoHS
COMPLIANT
GD S
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
20
V
VGS
± 12
TC = 25 °C
6.8a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
6a 6.8 a, b , c
TA = 70 °C
6 a, b, c
A
Pulsed Drain Current
IDM
30
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
5.2 2.1b, c
TC = 25 °C
6.3
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
4 2.
VBI1226 Datasheet
