Click to expand full text
VBBD1330D
N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.029 at VGS = 10 V
0.035 at VGS = 4.5 V
DFN 3x2
1
D
D D
D D
D
G
S
ID (A) 6.7 6.1
FEATURES • Halogen-free According to IEC 61249-2-21
Available • TrenchFET® Power MOSFET
D
G
Bottom View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted´
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 85 °C
ID
6.7
4.9
4.8
3.5
A
IDM
20
Continuous Source Current (Diode Conduction)a
IS
2.1
1.1
Maximum Power Dissipationa
TA = 25 °C TA = 85 °C
PD
2.5
1.3
1.3
0.
VBBD1330D Datasheet
